T. kimoto et al.: phys. stat. sol. b 245 1327
WebThe lifetime values in the base range from 1.1 s to 2.1 s; these values demonstrate the high quality of the 4H-SiC epilayer and the optimized device processing. The observed lifetimes … WebJul 15, 2003 · Uniformity in SiC homoepitaxial growth by horizontal hot-wall CVD w as investigated. By controlling hydrogen carrier gas and improving susceptor design, a low σ/m value of 2.3 % in thickness uniformity was obtained on a 35 mm wafer with 2 mm-edge exclusion. Dopi g uniformity was sensitive mainly to growth pressure. Introduction …
T. kimoto et al.: phys. stat. sol. b 245 1327
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WebJul 31, 2012 · Fast states at SiO 2 /SiC interfaces annealed in NO at 1150–1350 °C have been investigated. The response frequency of the interface states was measured by the conductance method with a maximum frequency of 100 MHz. The interface state density was evaluated based on the difference between quasi-static and theoretical capacitances … WebJul 1, 2008 · Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation. T. Hiyoshi, T. Kimoto. Materials Science. 2009. Significant …
WebIn this paper the impact of high temperature annealing on the formation of intrinsic defects in 4H-SiC such as Z 1/2 and EH 6/7 was examined. Therefore, three epitaxial layers with … WebWe compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either 12C or 14N, followed by high temperature anneals in Ar atmosphere. Application of these techniques to samples cut from the same wafer/epilayer yields 2- to 11-fold lifetime increases, with the implantation/annealing …
WebJul 31, 2012 · ABSTRACT. Fast states at SiO 2 /SiC interfaces annealed in NO at 1150–1350 °C have been investigated. The response frequency of the interface states was measured … WebJul 1, 2008 · Carrier lifetimes in n‐type 4H‐SiC epilayers have been investigated by differential microwave photoconductance decay measurements. Through a correlation study between lifetime and various deep levels, the Z1/2 and/or EH6/7 centers have been identified as effective recombination centers. When the Z1/2 (and EH6/7) concentration is higher …
WebMay 15, 2012 · 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension. Hiroki Niwa 1, Jun Suda 1 and Tsunenobu Kimoto 1. Published 15 May 2012 • ©2012 The Japan Society of Applied Physics Applied Physics Express, Volume 5, Number 6 Citation Hiroki Niwa et al 2012 Appl. Phys. Express 5 064001 DOI 10.1143/APEX.5.064001
WebVolume 260, Issue 1. In 2024, the youngest family member physica status solidi (RRL) – Rapid Research Letters is turning 15 years. To celebrate this milestone, we present a new … dish ota adapter installWebCritical growth conditions where the growth mode changes from step-flow to two-dimensional nucleation are predicted as a function of growth conditions using a model … dish ota offerWebT. Kimoto. Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan. Search for more papers by this author dishot insularWebWe reevaluate the absolute fluorescence and phosphorescence quantum yields of standard solutions by using a novel instrument developed for measuring the absolute emission … dishot gestiondishot hotelesWebKimoto T. et al.., “ Understanding and reduction of degradation phenomena in SiC power devices,” in Proc. IEEE 2024 Int. Reliability Phys. Symp., 2A-1.1 Google Scholar [34]. Tanaka A. et al.., “ Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes,” J. Appl. Phys., vol. 119, 095711, 2016. Google ... dish ota tuner moduleWebSep 15, 2016 · We investigated the dependency of minority carrier lifetimes on the nitrogen concentration, temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC epilayers. The minority carrier lifetimes greatly shortened when the nitrogen concentration exceeded 10 18 cm −3 through enhancing direct band-to-band and Auger … dish o the sea